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| SDS160EWT Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR SWITCHING DIODE | |||
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SDS160EWT
SILICON EPITAXIAL PLANAR SWITCHING DIODE
for ultra high speed switching application
Features
⢠Fast reverse recovery time
⢠Small total capacitance
⢠Low forward voltage
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
A
Top View
Marking Code: "A"
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Peak Forward Current
Surge Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Value
Unit
VRM
85
V
VR
80
V
IO
100
mA
IFM
300
mA
IFSM
2
A
PD
150
mW
TJ
150
OC
Tstg
- 55 to + 150
OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 100 mA
Reverse Current
at VR = 80 V
Total Capacitance
at VR = 0 V, f = 1 MHz
Reverse Recovery Time
at Irr = 0.1 X IR, IF = IR = 10 mA, RL = 100 â¦
Symbol
Max.
Unit
VF
1.2
V
IR
0.5
µA
CT
3
pF
trr
4
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009
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