SDB720WS Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

SDB720WS
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for high frequency rectification
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-repetitive Peak Forward Surge Current
Junction Temperature
Storage Temperature Range
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
RH
Top View
Marking Code: "RH"
Simplified outline SOD-323 and symbol
Symbol
Value
Unit
V_RM
40
V
V_R
40
V
I_O
0.5
A
I_FSM
2
A
T_j
125
O_C
T_s
- 55 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 500 mA
Reverse Current
at V_R = 35 V
Terminal Capacitance
at V_R = 0 V, f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 100 mA, I_rr = 10 mA, R_L = 100 Ω
Symbol
Typ.
Max.
Unit
V_F
-
0.55
V
I_R
-
100
µA
C_T
60
-
pF
t_rr
5
-
nS
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 16/01/2007