SDB720S Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR DIODE

SDB720S
SILICON EPITAXIAL PLANAR DIODE
SCHOTTKY BARRIER DIODE
for high speed switching circuit and small
current rectification applications
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Non-repetitive Peak Surge Current
Average Forward Current
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 200 mA
Reverse Current
at V_R = 30 V
Total Capacitance
at V_R = 0, f = 1 MHz
Reverse Recovery Time
at I_R = I_F = 10 mA
3
12
Marking Code: FZ
SOT-23 Plastic Package
Symbol
Value
Unit
V_RRM
30
V
V_R
30
V
I_FSM
1
A
I_O
200
mA
T_j
125
O_C
T_s
-55 to +125
O_C
Symbol Min.
Typ.
Max.
Unit
V_F
-
-
0.55
V
I_R
-
-
50
μA
C_T
-
30
-
pF
t_rr
-
3
-
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 18/12/2005