SDB412WS Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

SDB412WS
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features
• Small surface mounting type
• Low forward voltage
• High reliability
Applications
• Low power rectification
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
PR
Top View
Marking Code: "PR"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Peak Forward Surge Current
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 10 mA
at I_F = 500 mA
Reverse Current
at V_R = 10 V
at V_R = 40 V
Total Capacitance
at V_R = 10 V, f = 1 MHz
Symbol
Value
Unit
V_RM
40
V
V_R
20
V
I_O
0.5
A
I_FSM
3
A
T_j
125
O_C
T_s
- 40 to + 125
O_C
Symbol
Typ.
Max.
Unit
V_F
-
0.3
V
-
0.5
I_R
-
30
µA
-
200
C_T
20
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006