SDB310WS Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – SCHOTTKY BARRIER DIODE

SDB310WS
SCHOTTKY BARRIER DIODE
Features
• Low power rectified
• Silicon epitaxial type
• High reliability
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Reverse Voltage
Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current (8.3 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 10 mA
at I_F = 30 mA
Reverse Current
at V_R = 30 V
Total Capacitance
at V_R = 1 V, f = 1 MHz
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
YK
Top View
Marking Code: "YK"
Simplified outline SOD-323 and symbol
Symbol
Value
Unit
V_R
30
V
I_F
0.2
A
I_FRM
0.5
A
I_FSM
1
A
P_D
150
mW
T_j
150
O_C
T_s
- 55 to + 150
O_C
Symbol
Max.
Unit
V_F
0.4
V
0.5
I_R
1
µA
C_T
10
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/03/2008