SDB310Q Datasheet, PDF (1/3 Pages) AUK corp – Schottky Barrier Diode

SDB310Q
SCHOTTKY BARRIER DIODE
Features
• Low power rectified
• Silicon epitaxial type
• High reliability
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Reverse Voltage
Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 10 mA
at I_F = 30 mA
Reverse Current
at V_R = 30 V
Total Capacitance
at V_R = 1 V, f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 10 mA, I_RR = 1 mA, R_L = 100 Ω
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
G
Top View
Marking Code: "G"
Simplified outline SOD-523 and symbol
Symbol
Value
Unit
V_R
30
V
I_F
0.2
A
I_FRM
0.5
A
I_FSM
2
A
P_D
150
mW
T_j
150
O_C
T_s
- 55 to + 150
O_C
Symbol
Max.
Unit
V_F
0.4
V
0.5
I_R
1
µA
C_T
10
pF
t_rr
5
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006