SDA06WS Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

SDA06WS
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features
• Small surface mounting type
• High reliability
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Forward Rectified Current
Peak Forward Current
Peak Forward Surge Current (60 Hz for 1 Cyc.)
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 100 mA
Reverse Current
at V_R = 20 V
Capacitance Between Terminals
at V_R = 10 V, f = 1 MHz
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
RJ
Top View
Marking Code: "RJ"
Simplified outline SOD-323 and symbol
Symbol
Value
Unit
V_RM
25
V
V_R
20
V
I_O
100
mA
I_FM
200
mA
I_FSM
1
A
T_j
125
O_C
T_s
- 55 to + 125
O_C
Symbol
Typ.
Max.
Unit
V_F
-
0.44
V
I_R
-
25
µA
C_T
8
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/04/2008