SD784WS Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – SILICON SCHOTTKY BARRIER DIODE

SD784WS
SILICON SCHOTTKY BARRIER DIODE
Applications
• Low voltage high speed switching
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
MD
Top View
Marking Code: "MD"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
V_RM
30
V
Reverse Voltage
V_R
30
V
Average Forward Current
I_O
100
mA
Peak Forward Current
I_FM
300
mA
Peak Forward Surge Current
Power Dissipation
I_FSM
1
A
P_D
200 ¹⁾
mW
Junction Temperature Range
T_j
125
O_C
Storage Temperature Range
T_s
- 55 to + 125
O_C
1) _{Mounted on a glass epoxy circuit of board of 20 X 20 mm, pad dimension of 4 X 4 mm.}
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 1 mA
at I_F = 5 mA
at I_F = 100 mA
Reverse Current
at V_R = 30 V
Total Capacitance
at V_R = 1 V, f = 1 MHz
Symbol
Typ.
Max.
Unit
V_F
-
-
0.35
0.4
V
-
0.55
I_R
-
15
µA
C_T
40
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006