SD103A Datasheet, PDF (1/2 Pages) Semtech Corporation – Silicon Schottky Barrier Diodes for general purpose applications

SD103A...SD103C
SILICON SCHOTTKY BARRIER DIODES
for general purpose applications
The SD103A, B, C is a metal on silicon Schottky barrier
device which is protected by a PN junction guard ring.
The low forward voltage drop and fast switching make
it ideal for protection of MOS devices, steering, biasing
and coupling diodes for fast switching and low logic
level applications. Other uses are for click suppression,
efficient full wave bridges in telephone subsets, and as
blocking diodes in rechargeable low voltage battery
system.
This diode is also available in MiniMELF case with type
designation LL103A, B, C.
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
Power Dissipation
SD103A
40
SD103B
V_RRM
30
V
SD103C
20
P_tot
400 ¹⁾
mW
Single Cycle Surge 60 Hz Sine Wave
I_FSM
15
A
Junction Temperature
T_j
125
O_C
Storage Temperature Range
T_S
- 55 to + 175
O_C
1) _{Valid provided the leads direct at the case are kept at ambient temperature.}
Characteristics at T_a = 25 ^OC
Parameter
Symbol
Typ.
Max.
Unit
Forward Voltage
at I_F = 20 mA
V_F
at I_F = 200 mA
V_F
Reverse Leakage Current
at V_R = 30 V
at V_R = 20 V
at V_R = 10 V
SD103A
SD103B
I_R
SD103C
Junction Capacitance
at V_R = 0 V, f = 1 MHz
C_tot
Reverse Recovery Time
at I_F = I_R = 5 mA to 200 mA , recover to 0.1 I_R
t_rr
-
0.37
V
-
0.6
V
-
5
µA
50
-
pF
10
-
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/06/2007