SD0103WS Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – SILICON SCHOTTKY BARRIER DIODE

SD0103WS
SILICON SCHOTTKY BARRIER DIODE
Features
• Low forward voltage drop and suitable for high
effifiency rectifying
• Ultra small resin package is suitable for high
density surface mounting and high speed assembly
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
YF
Top View
Marking Code: "YF"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
V_RRM
30
V
Mean Rectifying Current
I_O
100
mA
Non-Repetitive Peak Forward Surge Current (8.3 ms Single
Half Sine Wave)
I_FSM
1
A
Junction Temperature
Storage Temperature Range
T_j
125
O_C
T_s
- 55 to + 125
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 100 mA
Reverse Current
at V_R = 30 V
Symbol
Max.
Unit
V_F
0.44
V
I_R
50
µA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/11/2007