SB721Q-40 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – Silicon Epitaxial Planar Schottky Barrier Diode

SB721Q-40
Silicon Epitaxial Planar Schottky Barrier Diode
Applications
• High speed switching
Max. 0.45
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX ^{Max. 2.9}
Min. 27.5
Glass Case DO-34
Dimensions in mm
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_RM
40
V
V_R
40
V
I_O
30
mA
I_FSM
200
mA
T_J
125
O_C
T_stg
- 40 to + 125
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 1 mA
Reverse Current
at V_R = 25 V
Reverse Voltage
at I_R = 10 μA
Capacitance between Terminals
at V_R = 1 V, f = 1 MHz
Symbol Min. Typ. Max. Unit
V_F
-
-
0.37
V
I_R
-
-
0.5
μA
V_R
40
-
-
V
C_T
-
2
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 25/06/2007