SB706D-40 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

SB706D-40
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
For low current rectification
Features
• High reliability
• Low reverse current
3
12
Marking Code: "ZE"
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Peak Forward Surge Current ( t = 8.3 ms)
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_RM
45
V
V_R
40
V
I_O
30
mA
I_FSM
200
mA
T_j
125
O_C
T_stg
- 55 to + 125
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 1 mA
Reverse Current
at V_R = 10 V
Reverse Breakdown Voltage
at I_R = 10 µA
Capacitance between Terminals
at V_R = 1 V, f = 1 MHz
Symbol Min. Typ. Max. Unit
V_F
-
-
0.37
V
I_R
-
-
1
µA
V_(BR)R
45
-
C_T
-
2
-
V
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/12/2007