SB705D Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

SB705D
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for general purpose detection and high speed
switching applications
3
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current ¹⁾
Junction Temperature
Storage Temperature Range
1) _{60 Hz for 1}
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 1 mA
Reverse Current
at V_R = 10 V
Capacitance between Terminals
at V_R = 1 V, f = 1 MHz
Note: ESD sensitive product handling required.
12
Marking Code: RB
SOT-23 Plastic Package
Symbol
Value
Unit
V_RM
40
V
V_R
40
V
I_O
30
mA
I_FSM
200
mA
T_j
125
O_C
T_s
- 40 to + 125
O_C
Symbol
Typ.
Max.
Unit
V_F
-
0.37
V
I_R
-
1
µA
C_T
2
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 09/08/2006