SB425D Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – Silicon Epitaxial Planar Schottky Barrier Diode

SB425D
Silicon Epitaxial Planar Schottky Barrier Diode
Low current rectification
3
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current ¹⁾
Peak Forward Surge Current (60 Hz 1 Cycle) ¹⁾
Junction Temperature
Storage Temperature Range
1) _{Rating of per diode}
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 10 mA
at I_F = 100 mA
Reverse Current
at V_R = 10 V
Capacitance between Terminals
at V_R = 10 V, f = 1 MHz
12
Marking Code: "YA"
SOT-23 Plastic Package
Symbol
Value
Unit
V_RM
40
V
V_R
40
V
I_F(AV)
100
mA
I_FSM
1
A
T_j
125
O_C
T_stg
- 55 to + 125
O_C
Symbol
Typ.
Max.
Unit
V_F
-
0.34
V
-
0.55
I_R
-
30
µA
C_t
6
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/08/2007