SB411D Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

SB411D
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for low power rectification and switching power supply
Features
3
• Small surface mounting type.
• High reliability.
Marking
Marking Code: FE
12
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25^OC)
Parameter
Peak Reverse Voltage
DC Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current ¹⁾
Junction Temperature
Storage Temperature Range
1) _{60Hz for 1}
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 10mA
at I_F = 500mA
Reverse Current
at V_R =10V
Capacitance Between Terminals
at V_R =10V, f=1MHz
Symbol
V_RM
V_R
Io
I_FSM
T_j
T_s
Value
Unit
40
V
20
V
0.5
A
3
A
125
O_C
-40 to +125
O_C
Symbol
Min
V_F
-
-
I_R
-
C_T
-
Typ
Max
Unit
-
0.3
V
-
0.5
-
30
µA
20
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/10/2005