RN2Z Datasheet, PDF (1/1 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

RN2Z
SILICON RECTIFIER DIODE
Forward Current – 2.0 Ampere
Features
• For pulse rectification applications
Mechanical Data
• Case: Resin molded
Absolute Maximum Ratings and Characteristics
Transient Peak Reverse Voltage
Peak Reverse Voltage
Average Forward Current
at T_C = 125 ^OC
Peak Surge Forward Current
10mS Single Half Sine
Junction Temperature
Storage Temperature Range
Symbols
V_RSM
V_RM
I_F(AV)
I_FSM
T_j
T_S
Characteristics ( Ta=25^oC,unless otherwise specified )
Forward Voltage Drop
at I_F=2A
Reverse Leakage Current
at V_R=V_RM
Reverse Leakage Current Under High Temperature
at V_R=V_RM,_, T_j=150^oC
Reverse Recovery Time, Recovery point 90%
at I_F=I_RP=100mA
Reverse Recovery Time, Recovery point 75%
at I_F=100Ma,I_RP=200mA
Thermal Resistance
Between Junction and Lead
Symbol
V_F
I_R
HI_R
Trr-1
Trr-2
θj-1
Rating
200
200
2
70
-40 to +150
-40 to +150
Value(max.)
0.92
50
4
100
50
12
Units
V
V
A
A
O_C
O_C
Unit
V
µA
mA
nS
nS
O_C/W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
®
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 23/06/2003