RB751S-40 Datasheet, PDF (1/3 Pages) Rohm – Schottky barrier diode

RB751S-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for high speed switching and detection applications
Features
• Small surface mounting type
• Low reverse current and low forward voltage
• High reliability
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
D
Top View
Marking Code: "D"
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current (60 _{Hz, 1 Cycle)}
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 1 mA
Reverse Current
at V_R = 30 V
Capacitance Between Terminals
at V_R = 1 V, f = 1 MHz
Note: ESD sensitive product handling required.
Symbol
Value
Unit
V_RM
40
V
V_R
30
V
I_O
30
mA
I_FSM
200
mA
T_j
125
O_C
T_s
- 40 to + 125
O_C
Symbol
Typ.
Max.
Unit
V_F
-
0.37
V
I_R
-
0.5
µA
C_T
2
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006