RB521G-30 Datasheet, PDF (1/2 Pages) Rohm – Schottky barrier diode

RB521G-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for rectifying small power application
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
E
Top View
Marking Code: "E"
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Reverse Voltage
Average Rectified Forward Current
Peak Forward Surge Current (60 Hz for 1 cyc.)
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 10 mA
Reverse Current
at V_R = 10 V
Symbol
Value
Unit
V_R
30
V
I_O
100
mA
I_FSM
1
A
T_j
125
O_C
T_s
- 40 to + 125
O_C
Symbol
Max.
Unit
V_F
0.35
V
I_R
10
µA
Note: Please pay attention to static electricity when handling.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006