RB520S-30 Datasheet, PDF (1/3 Pages) Rohm – Schottky barrier diode

RB520S-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for low current rectification and high speed
switching applications
Features
• Extremely small surface mounting type
• High reliability
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
B
Top View
Marking Code: "B"
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current (60 _{Hz for 1 Cyc.)}
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 200 mA
Reverse Current
at V_R = 10 V
Note: ESD sensitive product handling required.
Symbol
Value
Unit
V_R
30
V
I_O
200
mA
I_FSM
1
A
T_j
125
O_C
T_s
- 40 to + 125
O_C
Symbol
Max.
Unit
V_F
0.6
V
I_R
1
µA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006