RB500V-40 Datasheet, PDF (1/3 Pages) Rohm – Schottky barrier diode

RB500V-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features
• Small surface mounting type
• Low I_R
• High reliability
Applications
• Low current rectification
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
S9
Top View
Marking Code: "S9"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Power Dissipation
Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current (60 Hz for 1 Cyc.)
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_RM
45
V
P_tot
200
mW
V_R
40
V
I_O
0.1
A
I_FSM
1
A
T_j
125
O_C
T_s
- 40 to + 125
O_C
Characteristics at T_a = 25 ^OC
Parameter
Reverse Breakdown Voltage
at I_R = 100 µA
Forward Voltage
at I_F = 10 mA
Reverse Current
at V_R = 10 V
Capacitance Between Terminals
at V_R = 10 V, f = 1 MHz
Note: ESD sensitive product handling required.
Symbol Min. Typ. Max. Unit
V_(BR)R
45
-
-
V
V_F
-
-
0.45
V
I_R
-
-
1
µA
C_T
-
6
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006