PBSS4140T Datasheet, PDF (1/2 Pages) NXP Semiconductors – 40 V, 1A NPN low VCEsat (BISS) transistor

PBSS4140T
30 V Low V_CE(sat) NPN Transistor
FEATURES
․Low collector-emitter saturation voltage
․High current capabilities
․Improved device reliability due to reduced heat generation.
APPLICATIONS
․General purpose switching and muting
․LCD backlighting
․Supply line switching circuits
․Battery driven equipment (mobile phones,
video cameras and hand-held devices).
Absolute Maximum Ratings (T_a = 25 ^OC)
Symbol
Value
Unit
Collector Base Voltage
V_CBO
40
V
Collector Emitter Voltage
V_CEO
30
V
Emitter Base Voltage
Collector Current (DC)
Peak Collector Current
V_EBO
5
V
I_C
1
A
I_CM
2
A
Peak Base Current
Total Power Dissipation
T_amb≦25^OC ¹⁾
T_amb≦25 ^OC ²⁾
I_BM
1
A
200
P_tot
mW
450
Junction Temperature
T_j
150
O_C
Storage Temperature Range
T_S
-65 to +150
O_C
Thermal Resistance From Junction In free air ¹⁾
417
to Ambient
In free air ²⁾
R_{th j-a}
278
K/W
Operating Ambient Temperature
T_amb
-65 to +150
O_C
1) _{Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.}
2) _{Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1cm}2_.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005