MPS750 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor

MPS750
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at -V_CE = 2 V, -I_C = 50 mA
at -V_CE = 2 V, -I_C = 500 mA
at -V_CE = 2 V, -I_C = 1 A
at -V_CE = 2 V, -I_C = 2 A
Collector Cutoff Current
at -V_CB = 60 V
Emitter Cutoff Current
at -V_EB = 4 V
Collector Base Breakdown Voltage
at -I_C = 100 µA
Collector Emitter Breakdown Voltage
at -I_C = 10 mA
Emitter Base Breakdown Voltage
at -I_E = 10 µA
Collector Emitter Saturation Voltage
at -I_C = 1 A, -I_B = 100 mA
at -I_C = 2 A, -I_B = 200 mA
Base Emitter Saturation Voltage
at -I_C = 1 A, -I_B = 100 mA
Base Emitter On Voltage
at -I_C = 1 A, -V_CE = 2 V
Gain Bandwidth Product
at -V_CE = 5 V, -I_C = 50 mA, f = 100 MHz
Symbol
-V_CBO
-V_CEO
-V_EBO
-I_C
P_tot
T_j
T_S
1.Emitter 2.Base 3.Collector
TO-92 Plastic Package
Weight approx. 019g
Value
Unit
60
V
40
V
5
V
2
A
625
mW
150
O_C
- 55 to + 150
O_C
Symbol
h_FE
h_FE
h_FE
h_FE
-I_CBO
-I_EBO
-V_(BR)CBO
-V_(BR)CEO
-V_(BR)EBO
-V_CE(sat)
-V_BE(sat)
-V_BE(on)
f_T
Min.
75
75
75
40
-
-
60
40
5
-
-
-
-
75
Max.
-
-
-
-
100
100
-
-
-
0.4
0.7
1.2
1
-
Unit
-
-
-
-
nA
nA
V
V
V
V
V
V
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/04/2007