MPS3638A Datasheet, PDF (1/2 Pages) Motorola, Inc – Switching Transistor

MPS3638A
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at -V_CE = 10 V, -I_C = 1 mA
at -V_CE = 10 V, -I_C = 10 mA
at -V_CE = 1 V, -I_C = 50 mA
at -V_CE = 2 V, -I_C = 300 mA
Collector Cutoff Current
at -V_CE = 15 V
Emitter Cutoff Current
at -V_EB = 3 V
Collector Base Breakdown Voltage
at -I_C = 100 µA
Collector Emitter Breakdown Voltage
at -I_C = 10 mA
Emitter Base Breakdown Voltage
at -I_E = 100 µA
Collector Emitter Saturation Voltage
at -I_C = 50 mA, -I_B = 2.5 mA
at -I_C = 300 mA, -I_B = 30 mA
Base Emitter Saturation Voltage
at -I_C = 50 mA, -I_B = 2.5 mA
at -I_C = 300 mA, -I_B = 30 mA
Gain Bandwidth Product
at -V_CE = 3 V, -I_C = 50 mA, f = 100 MHz
Output Capacitance
at -V_CB = 10 V, f = 1 MHz
Symbol
-V_CBO
-V_CEO
-V_EBO
-I_C
P_tot
T_j
T_S
1.Emitter 2.Base 3.Collector
TO-92 Plastic Package
Weight approx. 0.19g
Value
Unit
25
V
25
V
4
V
500
mA
625
mW
150
O_C
- 55 to + 150
O_C
Symbol
h_FE
h_FE
h_FE
h_FE
-I_CES
-I_EBO
-V_(BR)CBO
-V_(BR)CEO
-V_(BR)EBO
Min.
80
100
100
20
-
-
25
25
4
Max.
-
-
-
-
35
35
-
-
-
Unit
-
-
-
-
nA
nA
V
V
V
-V_CEsat
-V_CEsat
-V_BEsat
-V_BEsat
f_T
C_cbo
-
-
-
0.8
150
-
0.25
V
1
V
1.1
V
2
V
-
MHz
10
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 14/03/2007