MPH80E Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR DIODE

MPH80E
SILICON EPITAXIAL PLANAR DIODE
Features
• High speed
• High reliability
Applications
• Ultra high speed switching
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Mean Rectifying Current
Peak Forward Current
Surge Current (1μs)
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 100 mA
Reverse Current
at V_R = 70 V
Diode Capacitance
at V_R = 6 V, f = 1 MHz
Reverse Recovery Time
at I_F = 5 mA, V_R = 6 V
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
W2
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
Symbol
Value
Unit
V_RM
V_R
I_O
I_FM
I_surge
P_tot
T_j
T_stg
80
80
100
300
4
200
150
- 55 to + 150
V
V
mA
mA
A
mW
O_C
O_C
Symbol
Max.
Unit
V_F
1.2
V
I_R
0.1
μA
C_d
3.5
pF
t_rr
4
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009