MMFTN20 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – N-Channel Enhancement Vertical D-MOS Transistor

MMFTN20
N-Channel Enhancement Vertical D-MOS Transistor
Features
• High-speed switching
• No secondary breakdown
Applications
• Thin and thick film circuits
• General purpose fast switching applications
1. Gate 2. Source 3. Drain
SOT-23 Plastic Package
Drain
Gate
Source
Absolute Maximum Ratings (T_a = 25 ^OC unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage (open drain)
Drain Current
Peak Drain Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
V_DS
V_GSO
I_D
I_DM
P_tot ¹⁾
P_tot ²⁾
T_j
T_s
50
V
± 20
V
100
mA
300
mA
300
mW
250
mW
150
O_C
- 65 to + 150
O_C
Thermal Characteristics
Parameter
Symbol
Value
Unit
R_θJA
Thermal Resistance from Juntion to Ambient
R_θJA
1) _{Device mounted on a ceramic substrate 10 X 8 X 0.7 mm.}
2) _{Device mounted on a printed-circuit board.}
430 ¹⁾
500 ²⁾
K/W
K/W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated: 01/06/2006