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MMFTN170 Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – N-Channel Enhancement Mode Field Effect Transistor
MMFTN170
N-Channel Enhancement Mode Field Effect Transistor
Feature
• Voltage controlled small signal switch
• High saturation current capability
Drain
Gate
Source
1. Gate 2. Source 3. Drain
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Drain-Source Voltage
Drain-Gate Voltage (RGS ≤ 1 MΩ)
Gate-Source Voltage
Drain Current - Continuous
Drain Current - Pulsed
Total Power Dissipation
Operating and Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Drain-Source Breakdown Voltage
at ID = 100 µA
Zero Gate Voltage Drain Current
at VDS = 25 V
Gate-Body Leakage, Forward
at VGS = 15 V
Gate-Source Threshold Voltage
at VDS = VGS, ID = 1 mA
Static Drain-Source On-Resistance
at VGS = 10 V, ID = 200 mA
Forward Transconductance
at VDS ≥ 2 VDS(on), ID = 200 mA
Input Capacitance
at VDS = 10 V, f = 1 MHz
Output Capacitance
at VDS = 10 V, f = 1 MHz
Reverse Transfer Capacitance
at VDS = 10 V, f = 1 MHz
Turn-On Time
at VDD = 25 V, ID = 500 mA, VGS = 10 V, RGEN = 50 Ω
Turn-Off Delay Time
at VDD = 25 V, ID = 500 mA, VGS = 10 V, RGEN = 50 Ω
Symbol
Value
Unit
VDSS
60
V
VDGR
60
V
VGSS
± 20
V
ID
500
800
mA
Ptot
300
mW
Tj, Ts
- 55 to + 150
OC
Symbol
V(BR)DSS
IDSS
IGSSF
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
t(on)
t(off)
Min.
60
-
-
0.8
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
320
-
-
-
-
-
Max.
-
0.5
10
3
5
-
40
30
10
10
10
Unit
V
µA
nA
V
Ω
mS
pF
pF
pF
ns
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated: 10/02/2007