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MMDTXA4415DW Datasheet, PDF (1/4 Pages) SEMTECH ELECTRONICS LTD. – NPN/PNP Silicon Epitaxial Planar Dual Transistor
MMDTXA4415DW
NPN/PNP Silicon Epitaxial Planar Dual Transistor
Features
• Power switching circuit in a single package
• Mounting cost and area can be cut in half
6
5
4
TR1
1
2
TR2
3
1. Emitter 2. Base 3. Collector
4. Emitter 5. Base 6. Collector
SOT-363 Plastic Package
Absolute Maximum Ratings (Ta = 25℃) (TR1)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
15
V
Collector Emitter Voltage
-VCEO
12
V
Emitter Base Voltage
-VEBO
6
V
Collector Current
Collector Current 1)
-IC
500
mA
-ICP
1
A
Total Power Dissipation
Ptot
150
mW
Junction Temperature
Tj
150
℃
Operating ambient and Storage Temperature Range
Tstg
- 55 to + 150
℃
1) Single Pulse PW = 1 ms
Absolute Maximum Ratings (Ta = 25℃) (TR2)
Parameter
Symbol
Value
Unit
Supply Voltage
VCC
50
V
Iput Voltage
Collector Current 1)
VIN
- 10 to + 40
V
IC
100
mA
Total Power Dissipation
Ptot
150
mW
Junction Temperature
Tj
150
℃
Operating ambient and Storage Temperature Range
Tstg
- 55 to + 150
℃
1) Characteristics of built in Transistor.
SEMTECH ELECTRONICS LTD.
®
Dated: 24/08/2015 Rev: 01