MMDTC123W Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Digital Transistor

MMDTC123W
NPN Silicon Epitaxial Planar Digital Transistor
Resistance Values
R1 (KΩ) R2 (KΩ)
2.2
47
Base
(Input)
R1
R2
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Input Voltage
Positive
Negative
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 5 V, I_C = 10 mA
Collector Base Cutoff Current
at V_CB = 50 V
Collector Emitter Cutoff Current
at V_CE = 30 V
Emitter Base Cutoff Current
at V_EB = 5 V
Collector Emitter Saturation Voltage
at I_C = 5 mA, I_B = 0.25 mA
Input Off Voltage
at V_CE = 5 V, I_C = 100 µA
Input On Voltage
at V_CE = 0.3 V, I_C = 5 mA
Collector Capacitance
at V_CB = 10 V, f = 1 MHz
Input Resistance
Resistance Ratio
Collector
(Output)
Emitter
(Common)
Symbol
V_CBO
V_CEO
V_EBO
V_I
I_C
P_tot
T_j
T_S
Value
50
50
10
+ 12
-5
100
200
150
- 65 to + 150
Unit
V
V
V
V
mA
mW
O_C
O_C
Symbol Min. Typ. Max. Unit
h_FE
100
-
-
-
I_CBO
-
-
100
nA
I_CEO
-
-
1
µA
I_EBO
-
-
180
µA
V_CEsat
-
-
0.1
V
V_I(off)
-
-
0.5
V
V_I(on)
1.1
-
-
V
C_C
-
-
2.5
pF
R1
1.54
2.2
2.86
KΩ
R2/R1 17
21
26
-
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 28/11/2006