MMDTC114W Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Digital Transistor

MMDTC114W
NPN Silicon Epitaxial Planar Digital Transistor
Base
(Input)
R1
R2
Resistance Values
Type
R1 (KΩ)
MMDTC114W
10
Collector
(Output)
Emitter
(Common)
R2 (KΩ)
47
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 5 V, I_C = 5 mA
Collector Base Cutoff Current
at V_CE = 50 V
Emitter Base Cutoff Current
at V_EB = 5 V
Collector Emitter Saturation Voltage
at I_C = 5 mA, I_B = 0.25 mA
Input Off Voltage
at V_CE = 5 V, I_C = 100 µA
Input On Voltage
at V_CE = 0.3 V, I_C = 1 mA
Transition Frequency
at V_CE = 10 V, -I_E = 5 mA, f = 100 MHz
Input Resistance
Resistance Ratio
Symbol
Value
Unit
V_CBO
50
V
V_CEO
50
V
V_EBO
- 6 to + 40
V
I_C
100
mA
P_tot
200
mW
T_j
150
O_C
T_S
- 55 to + 150
O_C
Symbol
h_FE
I_CEO
I_EBO
V_CEsat
V_I(off)
V_I(on)
f_T
R1
R2/R1
Min.
68
-
-
-
-
1.4
-
7
3.7
Typ.
Max.
Unit
-
-
-
-
500
nA
-
0.88
mA
-
0.3
V
-
0.3
V
-
-
V
250
-
MHz
10
13
KΩ
4.7
5.7
-
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 24/06/2006