MMDTA115W Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Digital Transistor

MMDTA115W
PNP Silicon Epitaxial Planar Digital Transistor
Base
(Input)
R1
R2
Collector
(Output)
Emitter
(Common)
Resistance Values
Type
R1 (KΩ)
MMDTA115W
100
R2 (KΩ)
100
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at -V_CE = 5 V, -I_C = 5 mA
Collector Base Cutoff Current
at -V_CB = 50 V
Emitter Base Cutoff Current
at -V_EB = 5 V
Collector Emitter Saturation Voltage
at -I_C = 5 mA, -I_B = 0.25 mA
Input Off Voltage
at -V_CE = 5 V, -I_C = 100 µA
Input On Voltage
at -V_CE = 0.3 V, -I_C = 1 mA
Transition Frequency
at -V_CE = 10 V, I_E = 5 mA, f = 100 MHz
Input Resistance
Resistance Ratio
Symbol
Value
Unit
-V_CEO
V_EBO
-I_C
P_tot
50
V
- 40 to + 10
V
100
mA
200
mW
T_j
150
O_C
T_S
- 55 to + 150
O_C
Symbol
h_FE
-I_CBO
-I_EBO
-V_CEsat
-V_I(off)
-V_I(on)
f_T
R1
R2/R1
Min.
82
-
-
-
0.5
-
-
70
0.8
Typ.
Max.
Unit
-
-
-
-
500
nA
-
0.15
mA
-
0.3
V
-
-
V
-
3
V
250
-
MHz
100
130
KΩ
1
1.2
-
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 11/04/2007