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MMDT5P333 Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor
MMDT5P333
PNP Silicon Epitaxial Planar Transistor
for switching and interface circuit and drive circuit
applications
Features
• With built-in bias resistors
• Simplify circuit design
• Reduce a quantity of parts and
manufacturing process
Base
(Input)
R1
R2
Collector
(Output)
Emitter
(Common)
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 5 V, -IC = 50 mA
Collector Base Cutoff Current
at -VCB = 50 V
Base Emitter Current
at -VBE = 5 V
Collector Emitter Saturation Voltage
at -IC = 50 mA, -IB = 2.5 mA
Input On Voltage
at -VCE = 0.3 V, -IC = 20 mA
Input Off Voltage
at -VCE = 5 V, -IC = 100 µA
Input Resistor
Input Resistor
Resistance Ratio
Transition Frequency
at VCE = 10 V, -IE = 5 mA, f = 100 MHz
Symbol
Value
Unit
-VCBO
50
V
-VCEO
50
V
VEBO
- 20, 6
V
-IC
500
mA
Ptot
200
mW
Tj
150
OC
TS
- 55 to + 150
OC
Symbol Min.
hFE
56
-ICBO
-
-IBE
-
-VCE(sat)
-
-VI(on)
-
-VI(off)
R1
R2
R2 / R1
fT
0.3
2.31
7.5
2.4
-
Typ.
-
-
-
-
-
-
3.3
10
3
200
Max.
-
0.1
2.4
0.3
2
-
4.29
12.5
3.7
-
Unit
-
µA
mA
V
V
V
KΩ
KΩ
-
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 14/01/2008