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MMDT1P434 Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor
MMDT1P434
PNP Silicon Epitaxial Planar Transistor
for switching and interface circuit and drive circuit
applications
Features
• With built-in bias resistors
• Simplify circuit design
• Reduce a quantity of parts and
manufacturing process
Base
(Input)
R1
R2
Collector
(Output)
Emitter
(Common)
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 5 V, -IC = 5 mA
Collector Base Cutoff Current
at -VCB = 50 V
Collector Emitter Breakdown Voltage
at -IC = 100 µA
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 0.5 mA
Input On Voltage
at -VCE = 0.2 V, -IC = 5 mA
Input Off Voltage
at -VCE = 5 V, -IC = 100 µA
Input Resistor
Input Resistor
Resistance Ratio
Transition Frequency
at -VCE = 10 V, IE = 5 mA, f = 100 MHz
Symbol
Value
Unit
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
TS
50
50
6
100
200
150
- 55 to + 150
V
V
V
mA
mW
OC
OC
Symbol Min.
hFE
50
-ICBO
-
-V(BR)CEO
50
-VCE(sat)
-
-VI(on)
-
-VI(off)
R1
R2
R2 / R1
fT
0.5
3.29
15.4
3.6
-
Typ.
-
-
-
-
-
-
4.7
22
4.5
250
Max.
-
0.1
-
0.3
1.7
-
6.11
28.6
5.5
-
Unit
-
µA
V
V
V
V
KΩ
KΩ
-
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 14/01/2008