MMDT1N434 Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMDT1N434
NPN Silicon Epitaxial Planar Transistor
for switching and interface circuit and drive circuit
applications
Features
• With built-in bias resistors
• Simplify circuit design
• Reduce a quantity of parts and
manufacturing process
Base
(Input)
R1
R2
Collector
(Output)
Emitter
(Common)
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 5 V, I_C = 5 mA
Collector Base Cutoff Current
at V_CB = 50 V
Collector Emitter Breakdown Voltage
at I_C = 100 µA
Collector Emitter Saturation Voltage
at I_C = 10 mA, I_B = 0.5 mA
Input On Voltage
at V_CE = 0.2 V, I_C = 5 mA
Input Off Voltage
at V_CE = 5 V, I_C = 100 µA
Input Resistor
Input Resistor
Resistance Ratio
Transition Frequency
at V_CE = 10 V, -I_E = 5 mA, f = 100 MHz
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_S
50
50
6
100
200
150
- 55 to + 150
V
V
V
mA
mW
O_C
O_C
Symbol Min.
h_FE
50
I_CBO
-
V_(BR)CEO
50
V_CE(sat)
-
V_I(on)
-
V_I(off)
R₁
R₂
R₂ / R₁
f_T
0.5
3.29
15.4
3.6
-
Typ.
-
-
-
-
-
-
4.7
22
4.5
250
Max.
-
0.1
-
0.3
1.7
-
6.11
28.6
5.5
-
Unit
-
µA
V
V
V
V
KΩ
KΩ
-
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 14/01/2008