MMBTSD2652W Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSD2652W
NPN Silicon Epitaxial Planar Transistor
for low frequency amplifier and general purpose
amplification application
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1) _{Single pulse, Pw = 1 ms}
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 2 V, I_C = 200 mA
Collector Cutoff Current
at V_CB = 15 V
Emitter Cutoff Current
at V_EB = 6 V
Collector Base Breakdown Voltage
at I_C = 10 µA
Collector Emitter Breakdown Voltage
at I_C = 1 mA
Emitter Base Breakdown Voltage
at I_E = 10 µA
Collector Emitter Saturation Voltage
at I_C = 500 mA, I_B = 25 mA
Transition Frequency
at V_CE = 2 V, -I_E = 200 mA, f = 100 MHz
Output Capacitance
at V_CB = 10 V, f = 1 MHz
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
I_CP ¹⁾
P_tot
T_j
T_S
15
12
6
1.5
3
200
150
- 55 to + 150
V
V
V
A
mW
O_C
O_C
Symbol Min.
h_FE
270
I_CBO
-
I_EBO
-
V_(BR)CBO
15
V_(BR)CEO
12
V_(BR)EBO
6
V_CE(sat)
-
f_T
-
C_ob
-
Typ.
-
-
-
-
-
-
-
400
12
Max.
680
0.1
0.1
-
-
-
0.2
-
-
Unit
-
µA
µA
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/05/2007