MMBTSD1781 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSD1781
NPN Silicon Epitaxial Planar Transistor
Medium Power Transistor
The transistor is subdivided into two group Q and R
according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1) _{Single pulse Pw = 100 ms}
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 3 V, I_C = 100 mA
Current Gain Group Q
R
Collector Emitter Breakdown Voltage
at I_C = 1 mA
Collector Base Breakdown Voltage
at I_C = 50 µA
Emitter Base Breakdown Voltage
at I_E = 50 µA
Collector Cutoff Current
at V_CB = 20 V
Emitter Cutoff Current
at V_EB = 4 V
Collector Emitter Saturation Voltage
at I_C = 500 mA, I_B = 50 mA
Transition Frequency
at V_CE = 5 V, -I_E = 50 mA, f = 100 MHz
Output Capacitance
at V_CB = 10 V, I_E = 0 A, f = 1 MHz
SOT-23 Plastic Package
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_tot
T_j
T_S
Value
40
32
5
0.8
1.5
200
150
-55 to +150
Unit
V
V
V
A (DC)
A (Pulse) ¹⁾
mW
O_C
O_C
Symbol Min.
Typ.
Max.
Unit
h_FE
120
-
270
-
h_FE
180
-
390
-
V_(BR)CEO
32
-
-
V
V_(BR)CBO
40
-
-
V
V_(BR)EBO
5
-
-
V
I_CBO
-
-
0.5
µA
I_EBO
-
-
0.5
µA
V_CE(sat)
-
-
0.4
V
f_T
-
150
-
MHz
C_ob
-
15
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 16/12/2005