MMBTSD123 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSD123
NPN Silicon Epitaxial Planar Transistor
Low saturation medium current application
Suitable for low voltage large current drivers
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 1 V, I_C = 100 mA
Collector Cutoff Current
at V_CB = 20 V
Emitter Cutoff Current
at V_EB = 6 V
Collector Base Breakdown Voltage
at I_C = 50 µA
Collector Emitter Breakdown Voltage
at I_C = 1 mA
Emitter Base Breakdown Voltage
at I_E = 50 µA
Collector Emitter Saturation Voltage
at I_C = 500 mA, I_B = 50 mA
Transition Frequency
at V_CE = 5 V, I_C = 50 mA
Output Capacitance
at V_CB = 10 V, f = 1 MHz
SOT-23 Plastic Package
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_S
20
15
6.5
1
200
150
- 55 to + 150
V
V
V
A
mW
O_C
O_C
Symbol Min.
h_FE
150
I_CBO
-
I_EBO
-
V_(BR)CBO
20
V_(BR)CEO
15
V_(BR)EBO
6.5
V_CE(sat)
-
f_T
-
C_OB
-
Typ.
-
-
-
-
-
-
-
260
5
Max.
-
100
100
-
-
-
0.3
-
-
Unit
-
nA
nA
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/09/2007