MMBTSC945W Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC945W
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications
The transistor is subdivided into five groups R, O,
Y, P and L, according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 6 V, I_C = 1 mA
Current Gain Group
Collector Base Breakdown Voltage
at I_C = 100 µA
Collector Emitter Breakdown Voltage
at I_C = 10 mA
Emitter Base Breakdown Voltage
at I_E = 10 µA
Collector Cutoff Current
at V_CB = 40 V
Emitter Cutoff Current
at V_EB = 3 V
Collector Saturation Voltage
at I_C = 100 mA, I_B = 10 mA
Gain Bandwidth Product
at V_CE = 6 V, I_C = 10 mA
Output Capacitance
at V_CB = 6 V, f = 1 MHz
Noise Figure
at V_CE = 6 V, I_E = 0.5 mA, f = 1 KHz, R_S = 500 Ω
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_S
60
50
5
150
200
150
- 55 to + 150
V
V
V
mA
mW
O_C
O_C
Symbol Min.
R
h_FE
O
h_FE
Y
h_FE
P
h_FE
L
h_FE
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
V_CE(sat)
f_T
C_OB
NF
40
70
120
200
350
60
50
5
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
300
2.5
4
Max.
80
140
240
400
700
-
-
-
0.1
0.1
0.3
-
-
-
Unit
-
-
-
-
-
V
V
V
µA
µA
V
MHz
pF
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 12/09/2006