MMBTSC945 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC945
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into five groups R, O,
Y, P and L, according to its DC current gain. As
complementary type the PNP transistor
MMBTSA733 is recommended.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SOT-23 Plastic Package
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_S
60
50
5
150
200
150
- 55 to + 150
V
V
V
mA
mW
O_C
O_C
Characteristics at T_a = 25 ^OC
Parameter
Symbol Min.
DC Current Gain
at V_CE = 6 V, I_C = 1 mA
Current Gain Group R h_FE
40
O
h_FE
70
Y
h_FE
120
P
h_FE
200
L
h_FE
350
Collector Base Cutoff Current
at V_CB = 40 V
I_CBO
-
Emitter Base Cutoff Current
at V_EB = 3 V
I_EBO
-
Collector Base Breakdown Voltage
at I_C = 100 µA
V_(BR)CBO
60
Collector Emitter Breakdown Voltage
at I_C = 10 mA
V_(BR)CEO
50
Emitter Base Breakdown Voltage
at I_E = 10 µA
V_(BR)EBO
5
Collector Emitter Saturation Voltage
at I_C = 100 mA, I_B = 10 mA
V_CE(sat)
-
Gain Bandwidth Product
at V_CE = 6 V, I_C = 10 mA
f_T
-
Output Capacitance
at V_CB = 6 V, f = 1 MHz
C_OB
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
300
2.5
Max.
80
140
240
400
700
0.1
0.1
-
-
-
0.3
-
-
Unit
-
-
-
-
-
µA
µA
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/12/2007