MMBTSC5345W Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC5345W
NPN Silicon Epitaxial Planar Transistor
for RF amplifier
The transistor is subdivided into three groups, R,
O and Y, according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_S
30
20
4
20
200
150
- 55 + 150
V
V
V
mA
mW
O_C
O_C
Characteristics at T_amb = 25 ^OC
Parameter
DC Current Gain
at V_CE = 6 V, I_C = 1 mA
Current Gain Group
Collector Base Breakdown Voltage
at I_C = 10 µA
Collector Emitter Breakdown Voltage
at I_C = 5 mA
Emitter Base Breakdown Voltage
at I_E = 10 µA
Collector Cutoff Current
at V_CB = 30 V
Emitter Cutoff Current
at V_EB = 4 V
Collector Emitter Saturation Voltage
at I_C = 10 mA, I_B = 1 mA
Transition Frequency
at V_CE = 6 V, -I_E = 1 mA
Collector Output Capacitance
at V_CB = 6 V, f = 1 MHz
Symbol
R
h_FE
O
h_FE
Y
h_FE
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
V_CE(sat)
f_T
C_OB
Min.
40
70
120
30
20
4
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
550
1.4
Max.
80
140
240
-
-
-
0.5
0.5
0.3
-
-
Unit
-
-
-
V
V
V
µA
µA
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/05/2006