MMBTSC5345 Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC5345
NPN Silicon Epitaxial Planar Transistor
for RF amplifier.
The transistor is subdivided into three groups, R, O
and Y, according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_S
Characteristics at T_amb=25 ^OC
DC Current Gain
at V_CE=6V, I_C=1mA Current Gain Group R
O
Y
Collector Emitter Saturation Voltage
at I_C=10mA, I_B=1mA
Collector Cutoff Current
at V_CB=30V
Emitter Cutoff Current
at V_EB=4V
Collector Base Breakdown Voltage
at I_C=10µA
Symbol
h_FE
h_FE
h_FE
V_CE(sat)
I_CBO
I_EBO
V_(BR)CBO
Min.
40
70
120
-
-
-
30
Collector Emitter Breakdown Voltage
at I_C=5mA
V_(BR)CEO
20
Emitter Base Breakdown Voltage
at I_E=10µA
Transition Frequency
at V_CE=6V, I_E=-1mA
Output Capacitance
at V_CB=6V, f=1MHz
V_(BR)EBO
4
f_T
-
C_OB
-
SOT-23 Plastic Package
Value
Unit
30
V
20
V
4
V
20
mA
200
mW
150
O_C
-55 +150
O_C
Typ.
Max.
Unit
-
80
-
-
140
-
-
240
-
-
0.3
V
-
0.5
µA
-
0.5
µA
V
-
-
V
-
-
V
550
-
MHz
1.4
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 25/10/2005