MMBTSC5343W Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC5343W
NPN Silicon Epitaxial Planar Transistor
for general small signal amplifier applications.
The transistor is subdivided into four groups, O, Y,
G and L, according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_amb = 25 ^OC
Parameter
DC Current Gain
at V_CE = 6 V, I_C = 2 mA
Current Gain Group
Collector Base Breakdown Voltage
at I_C = 100 µA
Collector Emitter Breakdown Voltage
at I_C = 1 mA
Emitter Base Breakdown Voltage
at I_E = 10 µA
Collector Cutoff Current
at V_CB = 60 V
Emitter Cutoff Current
at V_EB = 5 V
Collector Emitter Saturation Voltage
at I_C = 100 mA, I_B = 10 mA
Transition Frequency
at V_CE = 10 V, I_C = 1 mA
Collector Output Capacitance
at V_CB = 10 V, f = 1 MHz
Noise Figure
at V_CE = 6 V, I_C = 0.1 mA,tf = 1 KHz, R_G = 10 KΩ
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_S
Symbol
O
h_FE
Y
h_FE
G
h_FE
L
h_FE
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
V_CE(sat)
f_T
C_OB
NF
Value
Unit
60
V
50
V
5
V
150
mA
200
mW
150
O_C
-55 +150
O_C
Min.
Max.
Unit
70
140
-
120
240
-
200
400
-
300
700
-
60
-
V
50
-
V
5
-
V
-
0.1
µA
-
0.1
µA
-
0.25
V
80
-
MHz
-
3.5
pF
-
10
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 30/03/2006