MMBTSC4097W Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC4097W
NPN Silicon Epitaxial Planar Transistor
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_S
40
32
5
0.5
200
150
- 55 to + 150
V
V
V
A
mW
O_C
O_C
Characteristics at T_a = 25 ^OC
Parameter
Symbol Min.
DC Current Gain
at V_CE = 3 V, I_C = 10 mA
Current Gain Group Q h_FE
120
R
h_FE
180
Collector Base Cutoff Current
at V_CB = 20 V
I_CBO
-
Emitter Base Cutoff Current
at V_EB = 4 V
I_EBO
-
Collector Base Breakdown Voltage
at I_C = 100 µA
V_(BR)CBO
40
Collector Emitter Breakdown Voltage
at I_C = 1 mA
V_(BR)CEO
32
Emitter Base Breakdown Voltage
at I_E = 100 µA
V_(BR)EBO
5
Collector Emitter Saturation Voltage
at I_C = 500 mA, I_B = 50 mA
V_CE(sat)
-
Transition Frequency
at V_CE = 5 V, -I_E = 20 mA, f = 100 MHz
f_T
-
Output Capacitance
at V_CB = 10 V, f = 1 MHz
C_ob
-
Typ.
-
-
-
-
-
-
-
-
250
6.5
Max.
270
390
1
1
-
-
-
0.6
-
-
Unit
-
-
µA
µA
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 26/11/2007