MMBTSC4075W Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC4075W
NPN Silicon Epitaxial Planar Transistor
For switching application.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_stg
60
50
5
150
30
200
150
- 55 to + 150
V
V
V
mA
mA
mW
O_C
O_C
Characteristics at T_a = 25 ^OC
Parameter
Symbol
Min.
DC Current Gain
at V_CE = 6 V, I_C = 2 mA
Current Gain Group O
h_FE
70
Y
h_FE
120
G
h_FE
200
L
h_FE
350
Collector Base Cutoff Current
at V_CB = 60 V
I_CBO
-
Emitter Base Cutoff Current
at V_EB = 5 V
I_EBO
-
Collector Emitter Saturation Voltage
at I_C = 100 mA, I_B = 10 mA
V_CE(sat)
-
Transition Frequency
at V_CE = 10 V, I_C = 1 mA
f_T
80
Collector Output Capacitance
at V_CB = 10 V, f = 1 MHz
C_ob
-
Max.
140
240
400
700
0.1
0.1
0.25
-
3.5
Unit
-
-
-
-
µA
µA
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 12/03/2009