MMBTSC3928 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC3928
NPN Silicon Epitaxial Planar Transistor
for low frequency amplification applications
The transistor is subdivided into four groups Q, R,
S and T, according to its DC current gain.
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_CBO
50
V
V_CEO
50
V
V_EBO
6
V
I_C
200
mA
P_tot
200
mW
T_j
150
O_C
T_S
- 55 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 6 V, I_C = 1 mA
Current Gain Group
at V_CE = 6 V, I_C = 0.1 mA
Collector Base Breakdown Voltage
at I_C = 100 µA
Collector Emitter Breakdown Voltage
at I_C = 100 µA
Emitter Base Breakdown Voltage
at I_C = 100 µA
Collector Cutoff Current
at V_CB = 50 V
Emitter Cutoff Current
at V_EB = 4 V
Collector Emitter Saturation Voltage
at I_C = 100 mA, I_B = 10 mA
Gain Bandwidth Product
at V_CE = 6 V, -I_E = 10 mA
Collector Output Capacitance
at V_CB = 6 V, f = 1 MHz
Noise Figure
at V_CE = 6 V, -I_E= 0.1 mA, f = 1 KHz, R_G = 2 KΩ
Symbol Min.
Q
h_FE
120
R
h_FE
180
S
h_FE
270
T
h_FE
390
h_FE
70
V_(BR)CBO
50
V_(BR)CEO
50
V_(BR)EBO
6
I_CBO
-
I_EBO
-
V_CE(sat)
-
f_T
-
C_ob
-
NF
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
200
4
-
Max. Unit
270
-
390
-
560
-
820
-
-
-
-
V
-
V
-
V
0.1
µA
0.1
µA
0.3
V
-
MHz
-
pF
15
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 05/08/2006