MMBTSC3876 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC3876
NPN Silicon Epitaxial Planar Transistor
for general purpose application
The transistor is subdivided into three groups O, Y
and G according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 1 V, I_C = 100 mA
at V_CE = 6 V, I_C = 400 mA
Collector Cutoff Current
at V_CB = 35 V
Emitter Cutoff Current
at V_EB = 5 V
Collector Emitter Saturation Voltage
at I_C = 100 mA, I_B = 10 mA
Base Emitter Voltage
at V_CE = 1 V, I_C = 100 mA
Transition Frequency
at V_CE = 6 V, I_C = 20 mA
Collector Base Capacitance
at V_CB = 6 V, f = 1 MHz
SOT-23 Plastic Package
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_S
35
30
5
500
50
200
150
- 55 to + 150
V
V
V
mA
mA
mW
O_C
O_C
Symbol Min.
O
h_FE
70
Y
h_FE
120
G
h_FE
200
O
h_FE
25
Y, G h_FE
40
I_CBO
-
I_EBO
-
V_CE(sat)
-
V_BE
-
f_T
-
C_cb
-
Typ.
-
-
-
-
-
-
-
-
-
300
7
Max.
140
240
400
-
-
0.1
0.1
0.25
1
-
-
Unit
-
-
-
-
-
µA
µA
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/04/2007