MMBTSC3838W Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC3838W
NPN Silicon Epitaxial Planar Transistor
for high frequency amplifier application
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_S
20
11
3
50
200
150
- 55 to + 150
V
V
V
mA
mW
O_C
O_C
Characteristics at T_a = 25 ^OC
Parameter
Symbol Min.
DC Current Gain
at V_CE = 10 V, I_C = 5 mA
Current Gain Group R hFE
56
S
h_FE
120
Collector Cutoff Current
at V_CB = 10 V
Emitter Cutoff Current
at V_EB = 2 V
Collector Base Breakdown Voltage
at I_C = 10 µA
Collector Emitter Breakdown Voltage
at I_C = 1 mA
Emitter Base Breakdown Voltage
at I_E = 10 µA
Collector Emitter Saturation Voltage
at I_C = 10 mA, I_B = 5 mA
Transition Frequency
at V_CE = 10 V, I_E = 10 mA, f = 500 MHz
Output Capacitance
at V_CB = 10 V, f = 1 MHz
I_CBO
-
I_EBO
-
V_(BR)CBO
20
V_(BR)CEO
11
V_(BR)EBO
3
V_CE(sat)
-
f_T
1.4
C_ob
-
Noise Figure
at V_CE = 6 V, I_C = 2 mA , f = 500 MHz, Rg = 50 Ω
NF
-
Typ.
-
-
-
-
-
-
-
-
3.2
-
3.5
Max.
160
240
0.5
0.5
-
-
-
0.5
-
1.5
-
Unit
-
-
µA
µA
V
V
V
V
GHz
pF
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 26/05/2007