MMBTSC380 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC380
NPN Silicon Epitaxial Planar Transistor
High frequency amplifier application
for FM IF, OSC stage and AM CONV. IF stage
The transistor is subdivided into three groups R,
O, and Y, according to its DC current gain.
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Emitter Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
-I_E
P_tot
T_j
T_S
35
V
30
V
4
V
50
mA
50
mA
200
mW
125
O_C
-55 to +125
O_C
Characteristics at T_amb = 25 ^OC
Parameter
Symbol Min.
DC Current Gain
at V_CE = 12 V, I_C = 2 mA Current Gain Group R
h_FE
40
O
h_FE
70
Y
h_FE
120
Collector Cutoff Current
at V_CB = 35 V
I_CBO
-
Emitter Cutoff Current
at V_EB = 4 V
I_EBO
-
Collector Emitter Saturation Voltage
at I_C = 10 mA, I_B = 1 mA
Base Emitter Saturation Voltage
at I_C = 10 mA, I_B = 1 mA
V_CE(sat)
-
V_BE(sat)
-
Transition Frequency
at V_CE = 10 V, I_C = 1 mA
Collector Output Capacitance
at V_CB = 10 V, f = 1 MHz
Collector Base Time Constant
at V_CE = 10 V, -I_E = 1 mA, f = 30 MHz
Power Gain
at V_CC = 6 V, f = 10.7 MHz, -I_E = 1 mA
f_T
100
C_ob
1.4
C_c,r_bb’
10
G_pe
27
Typ.
-
-
-
-
-
-
-
-
2
-
29
Max.
80
140
240
0.1
0.1
0.4
1
400
3.2
50
33
Unit
-
-
-
µA
µA
V
V
MHz
pF
ps
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 06/05/2006