MMBTSC3356W Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC3356W
NPN Silicon Epitaxial Planar Transistor
for microwave low noise amplifier at VHF, UHF and
CATV band.
The transistor is subdivided into three groups, Q, R
and S, according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_S
20
12
3
100
200
150
- 65 to + 150
V
V
V
mA
mW
O_C
O_C
Characteristics at T_amb = 25 ^OC
Parameter
Symbol Min.
Typ.
Max.
Unit
DC Current Gain
at V_CE = 10 V, I_C = 20 mA Current Gain Group Q
h_FE
50
-
100
-
R
h_FE
80
-
160
-
S
h_FE
125
-
250
-
Collector Cutoff Current
at V_CB = 10 V
I_CBO
-
-
1
µA
Emitter Cutoff Current
at V_EB = 1 V
I_EBO
-
-
1
µA
Gain Bandwidth Product
at V_CE = 10 V, I_C = 20 mA
f_T
-
7
-
GHz
Feed-Back Capacitance
at V_CB = 10 V, f = 1 MHz
C_re1)
-
0.55
1
pF
Insertion Power Gain
at V_CE = 10 V, I_C = 20 mA, f = 1 GHz
│S_21e│ ²
-
11.5
-
dB
Noise Figure
at V_CE = 10 V, I_C = 7 mA, f = 1 GHz
NF
-
1.1
2
dB
1) _{The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.}
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/05/2006