MMBTSC2715 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC2715
NPN Silicon Epitaxial Planar Transistor
for high frequency amplifier applications
for FM IF, OSC stage and AM CONV. IF stage
The transistor is subdivided into three groups, R,
O and Y, according to its DC current gain.
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_CBO
35
V
V_CEO
30
V
V_EBO
4
V
I_C
50
mA
I_B
10
mA
P_tot
200
mW
T_j
125
O_C
T_S
-55 to +125
O_C
Characteristics at T_amb = 25 ^OC
Parameter
Symbol Min.
DC Current Gain
at V_CE = 12 V, I_C = 2 mA Current Gain Group R
h_FE
40
O
h_FE
70
Y
h_FE
120
Collector Cutoff Current
at V_CB = 35 V
Emitter Cutoff Current
at V_EB = 4 V
Collector Emitter Saturation Voltage
at I_C = 10 mA, I_B = 1 mA
Base Emitter Saturation Voltage
at I_C = 10 mA, I_B = 1 mA
Current Gain Bandwidth Product
at V_CE = 10 V, I_C = 1 mA
Output Capacitance
at V_CB = 10 V, f = 1 MHz
Power Gain
at V_CE = 6 V, -I_E = 1 mA, f = 10.7 MHz
I_CBO
I_EBO
V_CE(sat)
V_BE(sat)
f_T
C_ob
G_pe
-
-
-
-
100
-
27
Typ. Max. Unit
-
80
-
-
140
-
-
240
-
-
0.1
µA
-
0.1
µA
-
0.4
V
-
1
V
-
400 MHz
2
3.2
pF
30
33
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 06/05/2006