MMBTSC2411 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC2411
NPN Silicon Epitaxial Planar Transistor
The transistor is subdivided into three groups P,
Q and R according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a =25 ^OC
Parameter
DC Current Gain
at V_CE = 3 V, I_C = 100 mA
Collector Base Breakdown Voltage
at I_C= 100 µA
Collector Emitter Breakdown Voltage
at I_C= 1 mA
Emitter Base Breakdown Voltage
at I_E= 100 µA
Collector Cutoff Current
at V_CB= 20 V
Emitter Cutoff Current
at V_EB = 4 V
Collector Saturation Voltage
at I_C = 500 mA, I_B = 50 mA
Transition frequency
at V_CE = 5 V, -I_E = 20 mA, f = 100 MHz
Output Capacitance
at V_CB = 10 V, I_E = 0 A, f = 1 MHz
SOT-23 Plastic Package
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_S
40
V
32
V
5
V
500
mA
200
mW
150
O_C
-55 to +150
O_C
Symbol Min. Typ. Max. Unit
P
h_FE
82
-
180
-
Q
h_FE
120
-
270
-
R
h_FE
180
-
390
-
V_(BR)CBO
40
-
-
V
V_(BR)CEO
32
-
-
V
V_(BR)EBO
5
-
-
V
I_CBO
-
-
1
µA
I_EBO
-
-
1
µA
V_CE(sat)
-
-
0.4
V
f_T
-
250
-
MHz
C_ob
-
6
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/12/2005